2SC1061 NPN EPITAXIAL SILICON TRANSISTOR

2SC1061 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220! Complement to 2SA671ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base voltage VEBO 7 VCollector Current (DC) 3 ACollector Dissipation (Tc=25℃) IC 25 WJunction Temperature PC 150Storage Temperature Tj -50~150 ℃ Tstg ℃ELECTRICAL CHARACTERISTICS (TA=25℃) Characteristic Symbol Test Condition Min Typ Max UnitCollector Cutoff Current ICBO VCB= 50V , IE=0 35 100 µAEmitter Cutoff Current IEBO VEB= 7V , IC=0 100 µADC Current Gain hFE1 VCE= 4V , IC=1A 200Collector- Emitter Saturation Voltage VCE(sat) IC=3A , IB=0.3A 1.0 VCurrent Gain Bandwidth Product fT VCE= 5V , IC=0.5A MHZ 8Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153Homepage: http://www.wingshing.com E-mail: [email protected]

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