tda2030

TDA2030 14W Hi-Fi AUDIO AMPLIFIERDESCRIPTION PentawattThe TDA2030 is a monolithic integrated circuit in ORDERING NUMBERS : TDA2030HPentawatt® package, intended for use as a low TDA2030Vfrequency class AB amplifier. Typically it provides14W output power (d = 0.5%) at 14V/4Ω; at ± 14Vthe guaranteed output power is 12W on a 4Ω loadand 8W on a 8Ω (DIN45500).The TDA2030 provides high output current and hasvery low harmonic and cross-over distortion.Further the device incorporates an original (andpatented) short circuit protection system compris-ing an arrangement for automatically limiting thedissipated power so as to keep the working pointof the output transistors within their safe operatingarea. A conventional thermal shut-down system isalso included.ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit V Vs Supply voltage ± 18 Vi Input voltage Vs V Vi Differential input voltage ± 15 A Io Output peak current (internally limited) 3.5 W Ptot Power dissipation at Tcase = 90°C 20 °CTstg, Tj Stoprage and junction temperature -40 to 150TYPICAL APPLICATIONMarch 1993 1/11

TDA2030 +VS OUTPUTPIN CONNECTION (top view) -VS INVERTING INPUTTEST CIRCUIT NON INVERTING INPUT2/11

TDA2030THERMAL DATASymbol Parameter Value UnitRth j-case Thermal resistance junction-case max 3 °C/WELECTRICAL CHARACTERISTICS (Refer to the test circuit, Vs = ± 14V, Tamb = 25°C unless otherwisespecified)Symbol Parameter Test conditions Min. Typ. Max. UnitVs Supply voltage ±6 ± 18 VId Quiescent drain current 40 60 mA Ib Input bias current Vs = ± 18V 0.2 2 µAVos Input offset voltage ± 2 ± 20 mVIos Input offset current ± 20 ± 200 nAPo Output power d = 0.5% Gv = 30 dBd Distortion f = 40 to 15,000 Hz RL = 4Ω 12 14 W 89 W RL = 8Ω d = 10% Gv = 30 dB f = 1 KHz RL = 4Ω 18 W RL = 8Ω 11 W Po = 0.1 to 12W RL = 4Ω Gv = 30 dB f = 40 to 15,000 Hz 0.2 0.5 % Po = 0.1 to 8W RL = 8Ω Gv = 30 dB f = 40 to 15,000 Hz 0.1 0.5 %B Power Bandwidth Gv = 30 dB RL = 4Ω 10 to 140,000 Hz (-3 dB) Po = 12WRi Input resistance (pin 1) 0.5 5 MΩGv Voltage gain (open loop) f = 1 kHz 90 dBGv Voltage gain (closed loop) B = 22 Hz to 22 KHz 29.5 30 30.5 dBeN Input noise voltageiN Input noise current 3 10 µV 80 200 pASVR Supply voltage rejection RL = 4Ω Gv = 30 dB 40 50 dB Rg = 22 kΩ Vripple = 0.5 Veff fripple = 100 HzId Drain current Po = 14W RL = 4Ω 900 mA Po = W RL = 8Ω 500 mATj Thermal shut-down junction 145 °C temperature 3/11

TDA2030 Figure 2. Output power vs. Figure 3. Distortion vs. supply voltage output powerFigure 1. Output power vs.supply voltageFigure 4. Distortion vs. Figure 5. Distortion vs. Figure 6. Distortion vs.output power output power frequencyFigure 7. Distortion vs. Figure 8. Frequency re- Figure 9. Quiescent currentfrequency sponse with different values vs. supply voltage of the rolloff capacitor C8 (see fig. 13)4/11

Figure 10. Supply voltage Figure 11. Power dissipa- TDA2030rejection vs. voltage gain tion and efficiency vs. output power Figure 12. Maximum power dissipation vs. supply volt- age (sine wave operation)APPLICATION INFORMATION Figure 14. P.C. board and component layout for the circuit of fig. 13 (1 : 1 scale)Figure 13. Typical amplifierwith split power supply 5/11

TDA2030 Figure 16. P.C. board and component layout for the circuit of fig. 15 (1 : 1 scale)APPLICATION INFORMATION (continued)Figure 15. Typical amplifierwith single power supplyFigure 17. Bridge amplifier configuration with split power supply (Po = 28W, Vs = ±14V)6/11

TDA2030PRACTICAL CONSIDERATIONSPrinted circuit board packageand the heatsinkwith singlesupply voltageThe layout shown in Fig. 16 should be adopted by configuration.the designers. If different layouts are used, theground points of input 1 and input 2 must be well Application suggestionsdecoupled from the ground return of the output in The recommended values of the components arewhich a high current flows. those shown on application circuit of fig. 13. Different values can be used. The following tableAssembly suggestion can help the designer.No electrical isolation is needed between theComponen t Recomm. Purpo se Larger than Smaller than R1 value recommended value recommended value R2 Decrease of gain (*) R3 22 kΩ Closed loop gain Increase of gain R4 setting Increase of gain R5 680 Ω Closed loop gain Decrease of gain (*) Decrease of input C1 setting impedance C2 C3, C4 22 kΩ Non inverting input Increase of input Danger of C5, C6 biasing impedance oscillation C7 Increase of low C8 1 Ω Frequency stability Danger of osccilat. at frequencies cutoff D1, D2 high frequencies Increase of low frequencies cutoff with induct. loads Danger of oscillation ≅ 3 R2 Upper frequency Poor high frequencies Danger of cutoff attenuation oscillation Danger of oscillation 1 µF Input DC decoupling Larger bandwidth 22 µF Inverting DC decoupling 0.1 µF Supply voltage bypass 100 µF Supply voltage bypass 0.22 µF Frequency stability ≅1 Upper frequency Smaller bandwidth 2π B R1 cutoff 1N4001 To protect the device against output voltage spikes(*) Closed loop gain must be higher than 24dB 7/11

TDA2030SHORT CIRCUIT PROTECTION peak power limiting rather than simple current lim- iting.The TDA2030 has an original circuit which limits the It reduces the possibility that the device gets dam-current of the output transistors. Fig. 18 shows that aged during an accidental short circuit from ACthe maximum output current is a function of the output to ground.collector emitter voltage; hence the output transis-tors work within their safe operating area (Fig. 2).This function can therefore be considered as being Figure 18. Maximum Figure 19. Safe operating area and collector characteristics of the output current vs. protected power transistor voltage [VCEsat] across each output transistorTHERMAL SHUT-DOWN junction temperature increases up to 150°C, the thermal shut-down simply reduces the powerThe presence of a thermal limiting circuit offers the dissipation at the current consumption.following advantages: The maximum allowable power dissipation de-1. An overload on the output (even if it is perma- pends upon the size of the external heatsink (i.e. its nent), or an abovelimit ambient temperaturecan thermal resistance); fig. 22 shows this dissipable be easily supported since the Tj cannot be power as a function of ambient temperature for higher than 150°C. different thermal resistance.2. The heatsink can have a smaller factor of safety compared with that of a conventional circuit. There is no possibility of device damage due to high junction temperature.If for any reason, the8/11

Figure 20. Output power and Figure 21. Output power and TDA2030drain current vs. case drain current vs. case Figure 22. Maximumtemperature (RL = 4Ω) temperature (RL = 8Ω) allowable power dissipation vs. ambient temperatureFigure 23. Example of heat-sink Dimension : suggestion. The following table shows the length that the heatsink in fig.23 must have for several values of Ptot and Rth. Ptot (W) 12 8 6 Length of heatsink 60 40 30 (mm) Rth of heatsink 4.2 6.2 8.3 (° C/W) 9/11

TDA2030PENTAWATT PACKAGE MECHANICAL DATA DIM. MIN. mm MAX. MIN. inch MAX. TYP. 4.8 TYP. 0.189 A 2.4 1.37 0.094 0.054 C 1.2 3.4 2.8 0.047 0.134 0.110 D 0.35 6.8 1.35 0.014 0.268 0.053 D1 0.8 0.55 0.031 0.022 E 1 17.85 1.05 0.039 0.703 0.041 F 15.75 1.4 0.126 0.620 0.055 F1 10.05 21.4 0.260 0.843 0.142 G 22.5 10.4 0.886 0.276 G1 2.6 10.4 0.396 0.409 H2 15.1 4.5 0.177 0.409 H3 4 3 0.102 0.157 L 6 15.8 0.594 0.118 L1 6.6 0.236 0.622 L2 3.65 0.260 L3 3.85 0.144 L5 0.152 L6 L7 M M1 Dia LD1 L1 D E A M M1 C L2 L5 L3 H3 F1 H2 Dia. F L7 G L6 G110/11

TDA2030Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for theconsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. Nolicense is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentionedin this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without expresswritten approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 11/11