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DE_MF

Published by Tab Nttf, 2017-11-29 03:31:49

Description: DE_MF

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T.T.L NAND GATE

E 8



9

Characteristics of T Typically operated from immunity about 1 – 1.6 V Many forms, some optimise speed versions comparabl power versions down to abo

TTL gate 5V supply Typical noiseed for speed, power, etc. Highle to CMOS (~ 1.5 ns) Low-out 1 mw/gate 10

CMOS LOGI Complementary metal ox CMOS logic gates use com N-channel and P-channel the initial devices used oxi were called CMOS (co semiconductor logic). In c almost no power in the sta are not changing).

ICxide semiconductor (CMOS)mplementary arrangements of Field effect transistor. Sinceide-isolated metal gates, theyomplementary metal–oxide–contrast to TTL, CMOS usesatic state (that is, when inputs 11


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